Near-Infrared Self-Powered Photodetector based on Graphene/Si Heterojunction

Weidan Yao; Jieyu Dai; Huafeng Dong

doi:10.6919/ICJE.202603_12(3).0003

Authors

Weidan Yao
Jieyu Dai
Huafeng Dong

DOI:

https://doi.org/10.6919/ICJE.202603_12(3).0003

Keywords:

Graphene/Si Heterojunction; Self-Powered; Near-Infrared Photodetection.

Abstract

High-performance self-powered infrared photodetectors that operate without consuming external power are of great significance for applications in optical communication, sensing, and motion detection. Herein, we constructed a vertical Graphene/Si heterojunction. Benefiting from the structural design and interface purification, the device exhibits a significantly enhanced self-powered photocurrent response and near-infrared detection capability. It demonstrates a responsivity of 5.55 A/W and a specific detectivity of 4.62 × 1012 Jones at 808 nm, along with a fast response time of 5.5/7.2 μs. Furthermore, the device retains its performance without degradation after 200 days, exhibiting stable temporal response characteristics and long-term repeatability. These results suggest that this heterostructure provides an effective strategy for high-performance self-powered infrared photodetectors.

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