Analysis of Factors Affecting the Pixel Performance of CMOS Image Sensors

Authors

  • Hao Xu

DOI:

https://doi.org/10.6919/ICJE.202511_11(11).0002

Keywords:

CIS; Temperature; Radiation; Pixel Structure; Manufacturing Process; Analysis and Summary.

Abstract

A CMOS image sensor is a semiconductor device that converts optical signals into electrical signals. It is widely used in various fields such as digital cameras, smartphones, security surveillance, medical imaging, and automotive electronics, serving as the core component of modern imaging technology. The surface of the sensor is composed of an array of millions of tiny photo sensitive units (pixels). Each pixel contains a photodiode and several transistors. This paper investigates the pixel performance of CMOS image sensors, analyzes the factors that affect pixel performance, and summarizes potential improvement methods.

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References

[1] Lin Y. (2005) CIS Tending to Replace CCD. Electronic Technology, (09): 15-18.

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[4] Joseph, D. and Collins, S. (2009) "Temperature Dependence of Fixed Pattern Noise in Logarithmic CMOS Image Sensors," in IEEE Transactions on Instrumentation and Measurement, 58(8): 2503-2511.

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[8] Chen J., Guo J., Zhong X., Gu X., Yu Z. (2025) Research Progress on Noise Suppression for CMOS Image Sensors. Electronics and Packaging, 25(06): 84-96.

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Published

2025-11-22

Issue

Section

Articles

How to Cite

Xu, H. (2025). Analysis of Factors Affecting the Pixel Performance of CMOS Image Sensors. International Core Journal of Engineering, 11(11), 12-23. https://doi.org/10.6919/ICJE.202511_11(11).0002