Hole Injection and EBL Structure Optimization in GaN Micro-LEDs based on Silvaco TCAD

Yuxing Yan; Zuyong Feng

doi:10.6919/ICJE.202609_12(9).0009

Authors

Yuxing Yan Guangdong University of Technology, Guangzhou, 510006, China
Zuyong Feng Guangdong University of Technology, Guangzhou, 510006, China

DOI:

https://doi.org/10.6919/ICJE.202609_12(9).0009

Keywords:

Micro-LED; Silvaco TCAD; Electron Blocking Layer; Hole Injection; Two-Dimensional Device Simulation.

Abstract

As Micro-LED display technology advances toward higher resolution, higher brightness, and higher current density, the effects of device scaling on carrier transport and interfacial behavior become increasingly significant. In GaN-based Micro-LEDs, the distinct effective masses, mobilities, and transport characteristics of electrons and holes generally result in weaker hole injection, which can lead to nonuniform carrier distribution in the active region and thereby limit radiative recombination in the quantum wells. Although the electron blocking layer (EBL) can suppress electron overflow toward the p-GaN side, its thickness and acceptor doping conditions also affect hole transport into the multiple-quantum-well (MQW) region. Therefore, the EBL structure and p-GaN doping require further optimization. In this work, a two-dimensional GaN/InGaN MQW Micro-LED device model was established using Silvaco TCAD. A self-consistent drift-diffusion transport model was employed to analyze the internal band structure, hole quasi-Fermi level, and hole current density. The results provide a two-dimensional TCAD-based approach for the optimization of EBL and p-GaN structural parameters in GaN-based Micro-LEDs.

Downloads

Download data is not yet available.

References

[1] Lin, J. Y., & Jiang, H. X. (2020). Development of microLED. Applied Physics Letters, 116(10), 100502.

[2] Song, J., Jiang, J., Li, M., & et al. (2025). Recent advances in nitride‐based micro‐LEDs for next‐generation display. Advanced Physics Research, 4(6), 2400190.

[3] Tian, P., McKendry, J. J. D., Gong, Z., & et al. (2012). Size-dependent efficiency and efficiency droop of blue InGaN micro-light emitting diodes. Applied Physics Letters, 101(23), 231110.

[4] Hung, W. C., Chang, S. P., Chang, S. J., & et al. (2025). Exploring an InGaN Micro-LED structure for optimum IQE operating on low current condition through simulation study. International Journal of Modern Physics B, 39(06), 2540029.

[5] Gurjar, R., Singh, C. P., Meena, A. S., & et al. (2022). Effect of parabolic quantum well on internal quantum efficiency of InGaN/GaN based Micro-LED at low current density. In 2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) (pp. 89–90). IEEE.

[6] Baek, W. J., Park, J., Shim, J., & et al. (2023). Ultra-low-current driven InGaN blue micro light-emitting diodes for electrically efficient and self-heating relaxed microdisplay. Nature Communications, 14(1), 1386.

[7] Lee, C. C., Huang, C. W., Liao, P. H., & et al. (2022). Comprehensive investigation of electrical and optical characteristics of InGaN-based flip-chip micro-light-emitting diodes. Micromachines, 14(1), 9.

[8] Zhang, Y., Liu, C., Zhu, M., & et al. (2021). A review on GaN-based two-terminal devices grown on Si substrates. Journal of Alloys and Compounds, 869, 159214.

[9] Yu, H., Memon, M. H., Jia, H., & et al. (2022). A 10 × 10 deep ultraviolet light-emitting micro-LED array. Journal of Semiconductors, 43(6), 062801.

[10] Haider, S. K., Rehman, H. U., Bi, W., & et al. Structural design of AlGaN deep-ultraviolet laser at wavelength 266.3 nm with graded electron blocking layer and composite quantum wells/barriers. ACS Omega.