Methods for Suppressing Short-Channel Effects in FinFET Process

Abstract

This paper focuses on the key technologies of FinFET devices for suppressing short-channel effects (SCE). It systematically analyzes their three-dimensional structural characteristics and the mechanisms of SCE, and explores the influence of critical factors such as fin body parameters, material selection, and three-dimensional structure optimization on device performance. Research indicates that FinFET, with its unique three-sided gate-wrapped channel structure and superior gate control efficiency, significantly enhances the electrostatic performance of the device, thereby demonstrating outstanding effectiveness in suppressing leakage currents caused by short-channel effects. This is specifically reflected in the effective mitigation of drain-induced barrier lowering (DIBL) and subthreshold leakage. The paper compares the current development status of FinFET technology domestically and internationally, clarifying the advantages and disadvantages of current technical routes and their industrial maturity. To meet the technical requirements of advanced process nodes such as 7 nm and below 5 nm, this study optimizes key parameters of the fin structure (including fin width and height) and introduces innovative material systems such as high-k dielectrics/metal gates. This lays a theoretical foundation for enhancing device performance and reducing power consumption, while providing a feasible technical path. The paper also looks forward to the future evolution of FinFET toward gate-all-around (GAA) and negative capacitance structures, emphasizing its significant value in extending Moore's Law. This study not only summarizes the core mechanisms of FinFET in suppressing short-channel effects, but also provides a reference for the design and manufacturing of subsequent advanced technology nodes.