Revealing the Electrical Characteristic Distribution of Internal Functional Layers in InGaAs/InP Avalanche Photodiodes

Yue Cheng; Feiyu Mao; Jiayu Meng

doi:10.6919/ICJE.202506_11(6).0044

Authors

Yue Cheng
Feiyu Mao
Jiayu Meng

DOI:

https://doi.org/10.6919/ICJE.202506_11(6).0044

Keywords:

InGaAs/InP APD; SPM; Zn Diffusion; Carrier Distribution; Surface Potential Distribution.

Abstract

This study systematically analyzed the electrical characteristic distribution of internal functional layers in InGaAs/InP avalanche photodiodes (APDs) and their correlation with Zn diffusion processes using cross-sectional scanning probe microscopy (SPM). Experimental results revealed a 536 mV surface potential difference at the InGaAs absorption layer/InP cap layer interface, primarily attributed to differences in electron affinitand bandgap, with Zn diffusion inducing a transition in carrier response from electron-dominated to hole-dominated behavior. The 7.3 μm lateral diffusion width exceeded the design specification due to lattice dynamics, while the 1.6 μm longitudinal diffusion depth demonstrated precise control, effectively optimizing electric field uniformity and suppressing edge breakdown. Furthermore, the unintentionally doped InGaAs absorption layer exhibited pronounced sensitivity to photoexcitation, unveiling a mechanism for light-regulated enhancement of minority carrier dynamics. By establishing a quantitative link between nanoscale electrical properties and Zn diffusion kinetics, this work provides critical insights for optimizing fabrication processes and reliability designs of high-performance APDs, advancing their applications in optical communications and quantum detection systems.

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