Application of Ion Beam Etching in the Micro-LED Process

Abstract

As an emerging display technology, GaN-based micron-scale light-emitting diodes (Micro-LEDs) possess broad application potential and have undergone rapid development in recent years. However, as device dimensions scale down, the fabrication yield of Micro-LEDs decreases significantly, primarily attributable to increased process complexity. This paper analyzes the issue of metal residue (commonly known as "metal fences") caused by metal etching during the Micro-LED manufacturing process. The effect of different etching angles on the removal efficiency of these metal residues was evaluated experimentally. The results indicate that the cleaning efficiency of metal residue per unit time is optimized when the ion beam etching angle is set to 140°.